PART |
Description |
Maker |
IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
IHW40N65R5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW40N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|
MID145-12A3 MII145-12A3 |
1200V IGBT module IGBT Modules: Boost Configurated IGBT Modules IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation IXYS, Corp.
|
U2102BNBSP U2102B |
IGBT/FET control timer for advanced dimmer, motion sensor, reverse phase control applications From old datasheet system
|
Atmel Corp
|